12 symbol v cbo v ceo v ebo i c i b p c tj t stg ratings ?60 ?60 ? ?5 ? 150(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob ratings ?00 max ?00 max ?60 min 50 min * 2.0 max 50 typ 400 typ unit m a m a v v mhz pf conditions v cb =?60v v eb =?v i c =?5ma v ce =?v, i c =?a i c =?a, i b =?.5a v ce =?2v, i e =2a v cb =?0v, f=1mhz v cc (v) ?0 r l ( ) 12 i c (a) ? v b2 (v) 5 i b2 (ma) 500 t on ( m s) 0.25typ t stg ( m s) 0.85typ t f ( m s) 0.2typ i b1 (ma) ?00 lapt 2sa1215 2 3 1.05 +0.2 -0.1 be 5.45 ?.1 5.45 ?.1 2-?.2 ?.1 36.4 ?.3 9 24.4 ?.2 7 21.4 ?.3 20.0min 4.0max 0.65 +0.2 -0.1 3.0 +0.3 -0.1 6.0 ?.2 2.1 a b c i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating 0 0 ? ? ?2 ?6 ? ? ? ? collector-emitter voltage v ce (v) collector current i c (a) ?0ma ?00ma i b =?0ma ?00ma ?00ma ?00ma ?00ma ?00ma ?50ma ?50ma 0 ? ? ? 0 ?.2 ?.4 ?.0 ?.6 ?.8 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =?0a ?a ?.02 ?.1 ? ?0 ?5 10 50 100 200 collector current i c (a) dc current gain h fe (v ce =?v) typ safe operating area (single pulse) ? ?0 ?00 ?00 ?.2 ? ?.5 ?0 ?0 ? collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 10ms f t i e characteristics (typical) 0.02 0.1 1 10 0 20 40 60 80 cut-off frequency f t (mh z ) (v ce =?2v) emitter current i e (a) typ 1 10 100 1000 2000 time t(ms) 0.1 1 2 0.5 transient thermal resistance q j-a (?c/w) q j-a t characteristics 160 120 80 40 5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) 0 ?5 ?0 ? 0 2 ? base-emittor voltage v be (v) collector current i c (a) (v ce =?v) 125?c (case temp) 25?c (case temp) ?0?c (case temp) (v ce =?v) ?.02 ?.1 ?.5 ? ? ?.5 ? ?0 ?5 30 50 100 200 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c with infinite heatsink without heatsink * h fe rank o(50 to 100), p(70 to 140), y(90 to 180) n absolute maximum ratings n electrical characteristics n typical switching characteristics (common emitter) (ta=25?c) (ta=25?c) silicon pnp epitaxial planar transistor (complement to type 2sc2921) application : audio and general purpose external dimensions mt-200 weight : approx 18.4g a. part no. b. lot no.
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